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DISCRETE SEMICONDUCTORS
DATA SHEET
BLV193 UHF power transistor
Product specification March 1993
Philips Semiconductors
Product specification
UHF power transistor
FEATURES * Emitter ballasting resistors for an optimum temperature profile * Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-A and class-AB operation in the 900 MHz communications band. The transistor has a SOT171 flange envelope with a ceramic cap. All leads are isolated from the mounting base. PINNING - SOT171
1 2 4 6
MBB012
BLV193
QUICK REFERENCE DATA RF performance at Th = 25 C in a common emitter test circuit. MODE OF OPERATION c.w. class-AB c.w. class-A Note 1. 2-tone measurement, fp = 900 MHz, fq = 901 MHz. PIN CONFIGURATION f (MHz) 900 900 VCE (V) 12.5 12 12 6 (PEP) PL (W) Gp (dB) 6.5 typ. 11 C (%) 50 - - typ. -30 dim (dB) (note 1)
halfpage
c
handbook, halfpage
PIN 1 2 3 4 5 6
DESCRIPTION emitter emitter base collector emitter emitter
3 5
b
e
Top view
MBA931 - 1
Fig.1 Simplified outline and symbol.
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
March 1993
2
Philips Semiconductors
Product specification
UHF power transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature range junction temperature CONDITIONS open emitter open base open collector DC or average value up to Tmb = 25 C - - - - - -65 - MIN.
BLV193
MAX. 36 16 3 3.5 44 150 200
UNIT V V V A W C C
handbook, halfpage
10
MRA552
handbook, halfpage
60
MRA553
IC (A) Th = 70 oC
Tmb = 25 oC
Ptot (W)
(2)
40
(1)
1 20
10-1
0 1 10 VCE (V) 102
0
20
40
60
80
100 120 Th (oC)
(1) Continuous operation. (2) Short time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER from junction to mounting base from mounting base to heatsink CONDITIONS Pdis = 44 W; Tmb = 25 C THERMAL RESISTANCE 4.0 K/W 0.4 K/W
March 1993
3
Philips Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter leakage current DC current gain CONDITIONS open emitter; Ic = 20 mA open base; Ic = 40 mA open collector; IE = 0.5 mA VCE = 16 V; VBE = 0 VCE = 10 V; Ic = 1.2 A; note 1 VCB = 12.5 V; IE = Ie = 0; f = 1 MHz VCE = 12.5 V; Ic = 0; f = 1 MHz MIN. 36 16 3 - 25 TYP. - - - - 60
BLV193
MAX. UNIT - - - 1 - V V V mA
Cc
collector capacitance
-
24.5
-
pF
Cre
feedback capacitance
-
13
-
pF
Cc-mb Note
collector-mounting base capacitance
-
2
-
pF
1. Measured under pulse conditions: tp 200 s; 0.02.
March 1993
4
Philips Semiconductors
Product specification
UHF power transistor
BLV193
MRA559
MRA546
100 handbook, halfpage hFE 80 VCE = 12.5 V 10 V 60
handbook,50 halfpage
Cc (pF) 40
30
40
20
20
10
0
0 0 2 4 IC (A) 6
0
4
8
12 VCB (V)
16
Measured under pulse conditions: tp 200 s; 0.02.
IE = ie = 0; f = 1 MHz.
Fig.4
DC current gain as a function of collector current, typical values.
Fig.5
Collector capacitance as a function of collector-base voltage, typical values.
MRA554
handbook, 40 halfpage
Cre (pF) 30
20
10
0
0
4
8
12 VCE (V)
16
f = 1 MHz.
Fig.6
Feedback capacitance as a function of collector-emitter voltage, typical values.
March 1993
5
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION RF performance at Th = 25 C in a common emitter test circuit; Rth j-mb = 0.4 K/W. MODE OF OPERATION c.w. class-AB c.w. class-A Note 1. 2-tone measurement, fp = 900 MHz, fq = 901 MHz. f (MHz) 900 900 VCE (V) 12.5 12 ICQ (A) 0.01 1.3 12 6 (PEP) PL (W) GP (dB) 6.5 typ. 7.5 typ. 11 c (%) > 50 typ. 60 -
BLV193
dim (dB) (note 1) - typ. -30
MRA555
handbook,10 halfpage
100
Gp (dB) 8
Gp
C (%) 80
handbook, halfpage
16
MRA551
PL (W) 12
6
C
60 8
4
40 4
2
20
0
0
4
8
12
PL (W)
0 16
0 0 1 2 3 PD (W) 4
Class-AB operation; VCE = 12.5 V; f = 900 MHz; ICQ = 10 mA.
Class-AB operation; VCE = 12.5 V; f = 900 MHz; ICQ = 10 mA.
Fig.7
Gain and efficiency as functions of load power, typical values.
Fig.8
Load power as a function of drive power, typical values.
Ruggedness in class-AB operation The BLV193 is capable of withstanding a load mismatch corresponding to VSWR = 10:1 through all phases under the following conditions: VCE = 15.5 V, f = 900 MHz, Th = 25 C, Rth j-mb = 0.4 K/W, and rated output power.
March 1993
6
Philips Semiconductors
Product specification
UHF power transistor
BLV193
handbook, 16 halfpage
MRA558
handbook, 12 halfpage
MRA550
Gp (dB) 12
PL(PEP) (W) 10
8
8
6
4 4 2
0
0
4
8
PL(PEP) (W)
12
0
0
0.2
0.4
0.6
0.8 1 PD(PEP) (W)
Class-A operation; VCE = 12 V; IC = 1.3 A; fp = 900 MHz; fq = 901 MHz.
Class-A operation; VCE = 12 V; IC = 1.3 A; fp = 900 MHz; fq = 901 MHz.
Fig.9
Gain as a function of load power (PEP), typical values.
Fig.10 Load power (PEP) as a function of drive power (PEP), typical values.
MRA560
0 handbook, halfpage d ,d 35 (dB) -10 -20 d3 -30 -40 -50 -60 -70
d5
0
4
8 PL(PEP) (W)
12
Class-A operation; VCE = 12 V; IC = 1.3 A; fp = 900 MHz; fq = 901 MHz.
Fig.11 Intermodulation products as a function of load power (PEP), typical values.
March 1993
7
Philips Semiconductors
Product specification
UHF power transistor
BLV193
handbook, full pagewidth
C1 50 C2
L1
L2
C5 L3
DUT
C6 L4 L5
C8 L6 L7 C12 50
C3
C4 L8
C7 L9 C13
C9
C10
C11
C16 V bias
R1
L10 L11 R2
MBC797
C14
C15 +VCC
Fig.12 Class-A and class-AB test circuit at f = 900 MHz.
March 1993
8
Philips Semiconductors
Product specification
UHF power transistor
List of components (see test circuit) COMPONENT C1, C12 C2, C3, C10, C11 C4, C5 C6, C7 C8, C9 C13 C14 C15 C16 L1, L7 L2 L3 L4 L5 L6 L8 L9 L10, L11 R1, R2 Notes 1. American Technical Ceramics type 100A or capacitor of the same quality. DESCRIPTION multilayer ceramic chip capacitor (note 1) film dielectric trimmer multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) electrolytic capacitor multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor stripline (note 2) stripline (note 2) stripline (note 2) stripline (note 2) stripline (note 2) stripline (note 2) 4 turns closely wound enamelled 0.4 mm copper wire 4 turns enamelled 1 mm copper wire grade 3B Ferroxcube wideband HF choke metal film resistor 10 , 0.25 W VALUE 33 pF 1.4 to 5.5 pF 4.7 pF 5.6 pF 3.3 pF 10 pF 6.8 F, 63 V 330 pF 100 nF 50 50 42.7 42.7 42.7 50 60 nH 45 nH length 29 mm; width 2.4 mm length 6 mm; width 2.4 mm length 13.1 mm; width 3 mm length 4.4 mm; width 3 mm length 4.6 mm; width 3 mm length 7 mm; width 2.4 mm int. dia 3 mm; leads 2 x 5 mm int. dia. 4 mm; leads 2 x 5 mm DIMENSIONS
BLV193
CATALOGUE NO.
2222 809 09001
2222 852 47104
4312 020 36642
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (r = 2.2), thickness 132 inch.
March 1993
9
Philips Semiconductors
Product specification
UHF power transistor
BLV193
handbook, full pagewidth
124 mm
80 mm
MBC798
handbook, full pagewidth
V bias
VCC
L11 L10 C13 R2 C16 C1 L1 C2 C3 R1 C5 L2 C4 L8 L4 L3 C7 C6 L6 L5 C9 C10 L9 C8
C14
C15
C12 L7 C11
MBC799
The components are mounted on one side of a copper clad PTFE fibre-glass board; the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by fixing screws and copper straps under the emitter leads.
Fig.13 Printed circuit board and component layout for 900 MHz test circuit.
March 1993
10
Philips Semiconductors
Product specification
UHF power transistor
BLV193
MRA561
MRA548
5 handbook, halfpage Zi () 4 xi 3 ri 2
5 handbook, halfpage ZL () 4 RL 3 XL
2
1
1
0 840
880
920
f (MHz)
960
0 840
880
920
f (MHz)
960
Class-AB operation; VCE = 12.5 V; ICQ = 10 mA; PL = 12 W; Th = 25 C.
Class-AB operation; VCE = 12.5 V; ICQ = 10 mA; PL = 12 W; Th = 25 C.
Fig.14 Input impedance (series components) as a function of frequency, typical values.
Fig.15 Load impedance (series components) as a function of frequency, typical values.
MRA556
handbook, 10 halfpage
Gp (dB) 8
6
handbook, halfpage
4 Zi ZL
MBA451
2
0 840
880
920
f (MHz)
960
Class-AB operation; VCE = 12.5 V; ICQ = 10 mA; PL = 12 W; Th = 25 C.
Fig.16 Definition of transistor impedance.
Fig.17 Power gain as a function of frequency, typical values.
March 1993
11
Philips Semiconductors
Product specification
UHF power transistor
BLV193
5 handbook, halfpage Zi () 4 xi ri 3
MRA547
5 handbook, halfpage ZL () 4 RL
MRA549
XL 3
2
2
1
1
0 840
880
920
f (MHz)
960
0 840
880
920
f (MHz)
960
Class-A operation; VCE = 12 V; IC = 1.3 A; Th = 25 C.
Class-A operation; VCE = 12 V; IC = 1.3 A; Th = 25 C.
Fig.18 Input impedance (series components) as a function of frequency, typical values.
Fig.19 Load impedance (series components) as a function of frequency, typical values.
handbook,14 halfpage
MRA557
Gp (dB) 12
8
handbook, halfpage
Zi ZL
MBA451
4
0 840
880
920
f (MHz)
960
Class-A operation; VCE = 12 V; IC = 1.3 A; Th = 25 C.
Fig.20 Definition of transistor impedance.
Fig.21 Power gain as a function of frequency, typical values.
March 1993
12
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads
BLV193
SOT171A
D
A F D1
U1 q H1 b1 C w2 M C
B
c
2
4
6
H
U2
E1
E
A
1
3
5
b e
p w3 M
w1 M A B Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 6.81 6.07 b 2.15 1.85 b1 3.20 2.89 c 0.16 0.07 D 9.25 9.04 D1 9.30 8.99 E 5.95 5.74 E1 6.00 5.70 e 3.58 F H H1 p 3.43 3.17 Q q U1 U2 w1 0.51 w2 1.02 0.04 w3 0.26 0.01
3.05 11.31 9.27 2.54 10.54 9.01
4.32 24.90 6.00 18.42 4.11 24.63 5.70
0.268 0.085 0.126 0.006 0.364 0.366 0.234 0.236 0.120 0.445 0.365 0.135 0.170 0.980 0.236 0.725 0.02 0.140 0.239 0.073 0.114 0.003 0.356 0.354 0.226 0.224 0.100 0.415 0.355 0.125 0.162 0.970 0.224
OUTLINE VERSION SOT171A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
March 1993
13
Philips Semiconductors
Product specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLV193
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
March 1993
14

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